Abstract Submitted to the NANOTUBE'05 Conference:

A semiconducting single walled carbon nanotube (SWNT) is an indispensable component of a carbon-nanotube (CNT)-based field-effect transistor (FET). However, for the high-density and high-yield integration of CNTs in devices, many technological issues still remain in obtaining only semiconducting SWNTs and in controlling their individual position, orientation, diameter, length, and chirality etc. One feasible approach is chemical vapor deposition (CVD) from custom-designed catalyst particles because the catalysts are thought to determine the characteristics of CNTs. We demonstrated the top-down control of diameter and position of Fe catalysts by means of "lithographically anchored nanoparticle synthesis (LANS*)", and the CNT growth from the patterned particles. LANS was able to control the average diameter of Fe particles less than 2nm with the positioning error less than ±10nm. CNTs were grown by the CVD using ethanol and methane. Yield of the CNTs was strongly dependent on the particle size, CVD temperature, preparation procedure of the particle etc. However, we confirmed that SWNTs were grown from the particles with the root-growth mode and that their diameters were directly influenced by the particle size. These results showed the possibility of top-down control of SWNT characteristics.

*M. Ishida et. al., Jpn. J. Appl. Phys. 43 (2004) L1356.

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