Abstract Submitted to the NANOTUBE'05 Conference:

One-dimensional materials structures, such as carbon nanotubes and semiconductor nanowires, attract much attention for their promise to extend the miniaturization of electronic devices and circuits. Top-down fabricated nano-devices tend to have their properties dominated by process-induced damage, rendering ultra-small devices not so useful, while bottom-up fabrication methods may allow dimensions on the scale even below 10 nm, still with superb device properties. I will in this talk describe our research on catalytically induced growth of semiconductor nanowires. Our method uses catalytic gold nanoparticles, allowing tight control of diameter as well as position of where the nanowire grows, with our work completely focused on epitaxially nucleated nanowires in which the nanowire structure can be seen as a coherent, monolithic extension of the crystalline substrate material. One of the most important achievements in this field of research is the realization of atomically abrupt heterostructures within nanowires, in which the material composition can be altered within only one or a few monolayers, thus allowing 1D heterostructure devices to be realized. This has allowed a variety of quantum devices to be realized, such as single-electron transistors, resonant tunneling devices as well as memory storage devices. Another recent field of progress has been the realization of ideally nucleated III-V nanowires on Si substrates, cases where we have also been able to report functioning III-V heterostructure device structures grown on Si. Finally, I will describe opportunities to form new kinds of materials based on this technique, such as 3D complex, tree-like nanowire structures.
 

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